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| SI4410DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES D TrenchFETr Power MOSFET ID (A) 10 8 rDS(on) (W) 0.0135 @ VGS = 10 V 0.020 @ VGS = 4.5 V D SO-8 S S S G 1 2 3 4 Top View Ordering Information: SI4410DY-REVA SI4410DY-T1-REVA (with Tape and Reel) SI4410DY-REVA-E3 (Lead free) SI4410DY-T1-A-E3 (Lead free with Tape and Reel) 8 7 6 5 D D D D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "20 10 8 50 2.3 2.5 1.6 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 71726 S-40838--Rev. L, 03-May-04 www.vishay.com Symbol RthJA RthJF Limit 50 22 Unit _C/W 1 SI4410DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID =10 A VGS = 4.5 V, ID = 5 A VDS = 15 V, ID = 10 A IS = 2.3 A, VGS = 0 V 20 0.011 0.015 38 0.7 1.1 0.0135 0.020 1.0 3.0 "100 1 25 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgt Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.3 A, di/dt = 100 A/ms VDD = 25 V, RL = 25 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 5 V, ID = 10 A VDS = 15 V VGS = 10 V ID = 10 A V, V, VDS = 15 V, VGS = 10 V, ID = 10 A 0.5 20 37 7 7.0 1.5 19 9 70 20 40 2.6 30 20 100 80 80 ns W 34 60 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Values shown are for product revision A. www.vishay.com 2 Document Number: 71726 S-40838--Rev. L, 03-May-04 SI4410DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 50 Output Characteristics VGS = 10 V thru 4 V 50 Transfer Characteristics 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 30 20 20 TC = 125_C 25_C 10 3V 10 - 55_C 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) 0.030 0.025 rDS(on) - On-Resistance (W) 0.020 On-Resistance vs. Drain Current 3000 2500 C - Capacitance (pF) 2000 1500 1000 500 0 Coss Crss Ciss Capacitance VGS = 4.5 V 0.015 VGS = 10 V 0.010 0.005 0.000 0 10 20 30 40 50 ID - Drain Current (A) 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Gate Charge 10 VDS = 15 V ID = 10 A V GS - Gate-to-Source Voltage (V) 8 rDS(on) - On-Resistance (W) 1.5 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 10 A (Normalized) 6 1.0 4 2 0.5 0 0 8 16 24 32 40 0.0 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71726 S-40838--Rev. L, 03-May-04 www.vishay.com 3 SI4410DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 40 Source-Drain Diode Forward Voltage 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 TJ = 25_C r DS(on) - On-Resistance ( W ) 0.08 0.06 0.04 ID = 10 A 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 0.6 0.4 0.2 VGS(th) Variance (V) - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 50 Threshold Voltage 80 Single Pulse Power 60 ID = 250 mA Power (W) 40 20 - 25 0 25 50 75 100 125 150 0 0.01 0.10 Time (sec) 1.00 10.00 TJ - Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse PDM t1 t2 t1 1. Duty Cycle, D = t2 2. Per Unit Base = RthJA = 50_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 30 www.vishay.com 4 Document Number: 71726 S-40838--Rev. L, 03-May-04 |
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